Preparation of TiO<sub>2</sub>-rich Ba–Ti–O thick films by laser chemical vapor deposition method

doi:10.1007/s40145-013-0057-x

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Abstract

TiO₂-rich Ba–Ti–O films were prepared on Pt/Ti/SiO₂/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi₂O₅, Ba₄Ti₁₃O₃₀ and BaTi₅O₁₁ films were prepared at Ti/Ba molar ratios m_Ti/Ba?=_?1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO₂-rich Ba–Ti–O films ranged from 54.0?μm/h to 177.6?μm/h. The permittivity of BaTi₂O₅ film (prepared at m_Ti/Ba?= 1.84 and deposition temperature T_dep?= 877?K), Ba₄Ti₁₃O₃₀ film (prepared at m_Ti/Ba?= 2.83 and T_dep?= 914?K) and BaTi₅O₁₁ film (prepared at m_Ti/Ba?= 4.49 and T_dep?= 955?K) were 50, 40 and 21, respectively.

Key words： laser chemical vapor deposition (LCVD) TiO₂-rich Ba–Ti–O film microstructure deposition temperature dielectric properties

Received: 26 January 2013 Published: 10 September 2015

Corresponding Authors: Dongyun GUO

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	Dongyun GUO
	Akihiko ITO
	Takashi GOTO
	Rong TU
	Chuanbin WANG
	Qiang SHEN
	Lianmeng ZHANG

Cite this article:

Dongyun GUO,Akihiko ITO,Takashi GOTO, et al. Preparation of TiO₂-rich Ba–Ti–O thick films by laser chemical vapor deposition method[J]. Journal of Advanced Ceramics, 2013, 2(2): 167-172.

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http://jac.tsinghuajournals.com/EN/10.1007/s40145-013-0057-x OR http://jac.tsinghuajournals.com/EN/Y2013/V2/I2/167

Deposition conditions of Ba–Ti–O films by LCVD

Ti/Ba precursor molar ratio (m_Ti/Ba) as a function of T_Ti at T_Ba?=_?563 K.

Effect of P_L on T_dep for Ba–Ti–O films prepared at various m_Ti/Ba.

XRD patterns of Ba-Ti-O films prepared at various m_Ti/Ba and T_dep: (a) 1.84 and 877 K, (b) 2.83 and 914 K, and (c) 4.49 and 955 K.

14]; (c) the equilibrium phase diagram of BaO–TiO₂ bulk reported by Lee et al. [10].">

(a) Phase relationship diagram of TiO₂-rich Ba–Ti–O films prepared at various m_Ti/Ba and T_dep; (b) our previous phase relationship diagram of Ba–Ti–O films [14]; (c) the equilibrium phase diagram of BaO–TiO₂ bulk reported by Lee et al. [10].

Surface morphologies of Ba–Ti–O films prepared under various conditions: (a) and (b) BT₂ films (m_Ti/Ba?=_?1.84, T_dep?=_?877?K and 982?K respectively); (c) and (d) B₄T₁₃ films (m_Ti/Ba?= 2.83, T_dep?= 914?K and 972?K respectively); (e) and (f) BT₅ films (m_Ti/Ba?=_?4.49, T_dep?= 885?K and 955?K respectively).

Cross-sectional morphologies of Ba–Ti–O films prepared under various conditions: (a) and (b) BT₂ films (m_Ti/Ba?=_?1.84, T_dep?=_?877?K and 982?K respectively); (c) and (d) B₄T₁₃ films (m_Ti/Ba?=_?2.83, T_dep?= 914 K and 972 K respectively); (e) and (f) BT₅ films (m_Ti/Ba?=_?4.49, T_dep?=_?885?K and 955?K respectively).

Relationship between R_dep and T_dep of Ba–Ti–O films in Arrhenius format.

Effect of temperature on permittivity of Ba–Ti–O films (measured at 1?MHz) prepared under various conditions: BT₂ film (m_Ti/Ba?= 1.84, T_dep?= 877 K), B₄T₁₃ film (m_Ti/Ba?= 2.83, T_dep = 914 K), and BT₅ film (m_Ti/Ba?= 4.49, T_dep?= 955 K).

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