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| Dielectric and impedance properties of sintered magnesium aluminum silicate glass-ceramic |
| Abhijit PRASAD*,Amitabha BASU |
| Department of Applied Physics, Indian School of Mines, Dhanbad 826004, India |
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Abstract Magnesium aluminum silicate (MgO–Al2O3–SiO2, MAS) glass-ceramic was prepared via sintering route. X-ray diffraction (XRD) analysis indicates the formation of multiphase compound with magnesium silicate fluoride and cordierite as major phases. Dielectric studies of the compound shows a strong frequency dispersion of permittivity in the low frequency region followed by a nearly frequency-independent behavior in the high frequency region. The presence of alkali ions (K+) in MAS glass-ceramic results in higher dielectric constant and higher losses. Dielectric loss (tanδ) seems to be reduced at higher frequencies after reaching the instrumental saturation at 1 kHz. Electrical properties of the material have been studied using a complex impedance spectroscopy (CIS) technique in a wide temperature (30–500?℃) and frequency (100 Hz–5 MHz) ranges. The complex impedance plots reveal the contribution of bulk as well as grain boundary effects in it. The bulk resistance, evaluated from complex impedance spectrum, has been observed to decrease with the rise in temperature, showing a typical negative temperature coefficient of resistance (NTCR) behavior. The smaller activation energy (Ea) of the compound within moderate temperature range suggests the presence of ions (K+ and F-) and singly ionized oxygen vacancies in the conduction process. The nature of variation of the electrical conductivity, and the values of activation energy of different temperature regions, suggest that the conduction process is of mixed type.
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Received: 18 September 2012
Published: 15 September 2015
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Corresponding Authors:
Abhijit PRASAD
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DTA curve for MAS glass-ceramic prepared by sintering route.
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Room-temperature XRD pattern of MAS glass-ceramic.
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SEM micrographs of fresh fractured surface of MAS glass-ceramic with different magnifications at room temperature.
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| Physical parameters (at room temperature) | Frequency | | 1 kHz | 10 kHz | 100 kHz | 1 MHz | | εr | 94.44 | 53.04 | 34.12 | 27.50 | | tanδ | 0.527 | 0.405 | 0.254 | 0.095 |
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Physical relative properties of MAS glass-ceramic sintered at 1000?℃
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Variation of dielectric constant (εr) and loss tangent (tanδ) with frequency at room temperature.
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Variation of (a) εr and (b) tanδ with temperature for MAS glass-ceramic.
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| Activation energy Ea (eV) | Temperature range | | Region I | Region II | | at 1 kHz | 0.09 | 0.76 | | at 10 kHz | 0.06 | 0.51 | | at 100 kHz | 0.06 | 0.30 | | at 1 MHz | 0.07 | 0.19 |
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Activation energy of MAS glass-ceramic sintered at 1000?℃
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Variation of AC conductivity (lnσAC) as a function of the inverse of absolute temperature (103/T) at four different frequencies for MAS glass-ceramic.
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| T (℃) | Rb (kΩ) | fr (kHz) | Cb (pF) | | 300 | 3059.17 | 0.65 | 80 | | 350 | 569.38 | 5 | 56 | | 400 | 165.25 | 25 | 38 | | 450 | 75.07 | 75 | 28 | | 500 | 27.19 | 250 | 23 |
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Values of bulk resistance (Rb), relaxation frequency (fr), and bulk capacitance (Cb) of MAS glass-ceramic at different temperatures
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(a) Nyquist plots of MAS glass-ceramic at different temperatures; (b) Nyquist plots of MAS glass-ceramic with equivalent circuit (inset).
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Z′) of MAS glass-ceramic as a function of frequency.">
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Variation of the real part of impedance (Z′) of MAS glass-ceramic as a function of frequency.
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Z″) of MAS glass-ceramic as a function of frequency.">
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Variation of the imaginary part of impedance (Z″) of MAS glass-ceramic as a function of frequency.
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Variation of the relaxation time (τ) as a function of temperature.
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M′ and (b) M″ with frequency of MAS glass-ceramic at selected temperatures.">
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Variation of (a) M′ and (b) M″ with frequency of MAS glass-ceramic at selected temperatures.
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